Good news - SiChain wins the first prize of Ningbo Science and Technology Progress Award

2024-10-15

Recently, the Science and Technology Bureau of Ningbo City announced the list of winners for the 2023 Ningbo Science and Technology Progress Award. The "Key Technology and Application Project for Efficient and Reliable Conversion and Grid Control of Distributed Optical Storage Inverters" jointly submitted by Jinlang Technology Co., Ltd. and SiChain won the first prize of the 2023 Ningbo Science and Technology Progress Award, which is one of the highest level awards in the field of science and technology in Ningbo.

This project has overcome many bottlenecks in the promotion and implementation of photovoltaic power generation through joint innovation and research in the photovoltaic and energy storage industry chain, effectively improving energy utilization efficiency, driving the development of the photovoltaic and energy storage inverter industry, and providing a national production solution for photovoltaic storage inverter systems and distributed power stations to achieve the dual carbon goal, achieving significant social and economic benefits.

SiChain, relying on its profound understanding of photovoltaic energy storage applications and its leading design and process capabilities, has developed a 1200V 32m Ω SiC MOSFET for this project with leading performance, excellent reliability, outstanding cost-effectiveness, and successfully completed its task of independent innovation and localization of silicon carbide devices for photovoltaic energy storage.

Silicon carbide power devices have broad application potential in photovoltaic inverters and energy storage products. In the MPPT circuit on the component side, system efficiency and operating frequency can be improved, thereby increasing the power density of the system and reducing the size and weight of the inverter. In the DC-AC inverter circuit on the grid side, silicon carbide MOSFETs will change the bulky and high cost design of traditional IGBT modules. In the Buck Boost circuit on the battery side, the low switching loss of silicon carbide MOSFET makes the charging and discharging circuit efficient and compact in size. Another element that must be considered in photovoltaic and energy storage applications is the cosmic ray threat that outdoor high-altitude applications must face. It will challenge the voltage and avalanche resistance of power devices, thereby causing reliability risks. Pure semiconductor silicon carbide devices have been optimized for the above scenarios, resulting in better performance in photovoltaic energy storage applications.

Silicon carbide devices have been validated in improving the performance of photovoltaic systems, which is beneficial for improving investment returns, enhancing system reliability, and reducing construction difficulty in photovoltaic power generation projects. SiChain regards photovoltaics and energy storage as strategic growth directions, and has accumulated considerable practical production data in the past two years, fully verifying the high reliability and outstanding cost-effectiveness of its products. In addition to supporting customers to make good use of existing products, SiChain has also launched silicon carbide discrete devices and module products for photovoltaic and energy storage applications.

China's photovoltaic energy storage industry has already taken the lead in the world, but most of its core silicon carbide devices still rely on imports. Pure semiconductors have made sufficient preparations in technology, production capacity, and products, and will work together with upstream and downstream industrial chains to contribute greater strength to the further sustainable development of China's photovoltaic energy storage industry with the "three highs" of high performance, high reliability, and high cost-effectiveness of their products.